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有关“MOSFET”的课程有以下9条记录
TID基础知识
TID基础知识
课程时长:52:03
视频集数:3
标签: TID 双极结转移 MOSFET
The most common radiation requirement in the aerospace design community is Total Ionizing Dose (TID), also known as total dose. Total dose effects are caused when electrons and protons create excess charge in the dielectric layers used for insulation in electronic devices. Total dose effects are cumulative and require chronic exposure to numerous radiation events before device degradation becomes obvious. Electronics in a satellite or spacecraft thus accumulate TID damage over time as they operate under continuous levels of radiation. While electrons are mobile in insulators, the holes (positively-charged atoms) must move by breaking bonds and can become trapped in defects. The result of this accumulated positive charge in a device’s insulators leads to degradation and/or device failure. The oxide charge buildup affects the current-voltage characteristics of transistors used in semiconductor circuits. Proper operation of a transistor relies on the ability to switch it from a low-conductance (off) state to a high-conductance (on) state as the gate voltage passes through a threshold. Extended exposure to TID radiation can shift the threshold voltages, making transistors easier or harder to switch. Radiation may also increase the leakage current, causing the on and off states of the transistors to become less distinguishable. Either effect can ultimately cause circuit failure. For our space products, these effects have been characterized and summarized in our TID Radiation Reports.
如何以及为什么用负载开关替换分立MOSFET
如何以及为什么用负载开关替换分立MOSFET
课程时长:21:51
视频集数:1
标签: MOSFET
What you'll learn: How to identify a discrete power switching solution in a schematic The challenges of using a discrete solution How load switches provide better performance for power switching with more features and a smaller solution size
功率级:高性能参数和MOSFET和栅极驱动器的选择
功率级:高性能参数和MOSFET和栅极驱动器的选择
课程时长:9:45
视频集数:1
标签: MOSFET 栅极驱动器
Learn the motor drive subsystem in a cordless power tool, high performance parameters and the selection of MOSFETs and gate driver to achieve these high performance parameters in the power stage.
如何驱动碳化硅MOSFET以优化高功率系统的性能和可靠性
如何驱动碳化硅MOSFET以优化高功率系统的性能和可靠性
课程时长:24:38
视频集数:1
讲师:汪钢耀
标签: 碳化硅 MOSFET SiC材料
本课程概述了碳化硅(SiC)材料的特点以及基于SiC材料的MOSFET性能,描叙了一些SiC MOSFET的应用领域包括太阳能和电动汽车。 详细讨论了SiC MOSFET的驱动设计要求,以及简单介绍了几款TI SiC MOSFET驱动产品。
读懂MOSFET数据手册
读懂MOSFET数据手册
课程时长:27:40
视频集数:3
标签: MOSFET 雪崩能量 安全工作面积 电源
讨论MOSFET 产品说明书。具体来说,将讨论雪崩额定值及其含义。
电子电路基础知识讲座
电子电路基础知识讲座
课程时长:9:46:07
视频集数:79
讲师:傅强
标签: MOSFET 斩波电路 逆变电路 隔离驱动 二极管 放大电路 电源
本次课程由TI邀请青岛大学傅强老师录制,深入浅出的介绍了与电源技术相关的基础性知识,帮助大家更深入的了解产品,更轻松的进行产品的选型和设计。
电源设计小贴士28&29:估算热插拔MOSFET的瞬态温升
电源设计小贴士28&29:估算热插拔MOSFET的瞬态温升
课程时长:6:36
视频集数:1
标签: 电源设计 MOSFET 瞬态温升 电源
介绍如何估算MOSFET上的瞬态温升。
电源设计小贴士42:可替代集成MOSFET的分立器件
电源设计小贴士42:可替代集成MOSFET的分立器件
课程时长:7:35
视频集数:1
标签: 电源设计 分立器件 MOSFET 电源
如何使用分立式晶体管代换集成性MOSFET驱动器。
Power Tip 31: 同步降压MOSFET电阻比的正确选择
Power Tip 31: 同步降压MOSFET电阻比的正确选择
课程时长:4:33
视频集数:1
标签: 电源 MOSFET 电阻
如何正确选择同步降压MOSFET电阻比。
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